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2N5963 Datasheet NPN SILICON TRANSISTOR

Manufacturer: Central Semiconductor

Download the 2N5963 datasheet PDF. This datasheet also includes the 2N5962 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (2N5962_CentralSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

: The CENTRAL SEMICONDUCTOR 2N5961 series devices are epoxy molded silicon NPN transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain (hFE) and low noise.

MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation PD Power Dissipation (TC=25°C) PD Operating and Storage Junction Temperature TJ, Tstg 2N5961 2N5962 2N5963 60 45 30 60 45 30 7.0 50 625 1.5 -65 to +150 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N5961 2N5962 SYMBOL TEST CONDITIONS MIN MAX MIN MAX ICBO VCB=Rated VCBO - 2.0 - 2.0 ICBO VCB=Rated VCBO, TA=65°C - 50 - 50 IEBO VEB=5.0V - 1.0 - 1.0 BVCBO IC=10μA 60 - 45 - BVCEO IC=5.0mA 60 - 45 - BVEBO IE=10μA 7.0 - 7.0 - VCE(SAT) IC=10mA, IB=0.5mA, PW=300μs - 0.2 - 0.2 VBE(ON) VCE=5.0V, IC=1.0mA 0.5 0.7 0.5 0.7 hFE VCE=5.0V, IC=10μA 100 - 450 - hFE VCE=5.0V, IC=100μA 120 - 500 - hFE VCE=5.0V, IC=1.0mA 135 - 550 - hFE VCE=5.0V, IC=10mA 150 700 600 1.4K hfe VCE=5.0V, IC=10mA, f=1.0kHz 150 1.0K 600 2.0K fT VCE=5.0V, IC=10mA, f=100MHz 100 - 100 - Cob VCB=5.0V, IE=0 - 4.0 - 4.0 Cib VEB=0.5V, IC=0 - 6.0 - 6.0 2N5963 MIN MAX - 2.0 - 50 - 1.0 30 30 7.0 - 0.2 0.5 0.7 900 1.0K 1.2K 1.2K 2.2K 1.2K 3.0K 150 - 4.0 - 6.0 UNITS V V V mA mW W °C UNITS nA nA nA V V V V V MHz pF pF R1 (2-March 2016) 2N5961 2N5962 2N5963 SILICON NPN TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) 2N5961 2N5962 SYMBOL TEST CONDITIONS MAX MAX NF VCE=5.0V, IC=100μA, RS=1.0kΩ, BW=400Hz, f=1.0kHz 6.0 6.0 NF VCE=5.0V, IC=100μA, RS=10kΩ, BW=400Hz, f=1.0kHz - 4.0 NF VCE=5.0V, IC=100μA, RS=100kΩ, BW=400Hz, f=1.0kHz - 8.0 N

Overview

2N5961 2N5962 2N5963 SILICON NPN TRANSISTORS TO-92 CASE w w w.

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