Datasheet Details
| Part number | 2N5039 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 180.04 KB |
| Description | SILICON NPN POWER TRANSISTORS |
| Datasheet |
 2N5039 Datasheet
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Download the 2N5039 datasheet PDF. This datasheet also includes the 2N5038 variant, as both parts are published together in a single manufacturer document.
| Part number | 2N5039 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 180.04 KB |
| Description | SILICON NPN POWER TRANSISTORS |
| Datasheet |
2N5039 Datasheet
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: The CENTRAL SEMICONDUCTOR 2N5038 and 2N5039 are silicon NPN power transistors designed for power amplifier and power oscillator applications where high current, high voltage, and fast switching speeds are required.
MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEX VCER VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N5038 150 2N5039 120 150 120 110 95 90 75 7.0 20 30 5.0 140 -65 to +200 1.25 UNITS V V V V V A A A W °C °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N5038 SYMBOL TEST CONDITIONS MIN MAX ICEV ICEV ICEV ICEV ICEO ICEO IEBO IEBO BVCEX BVCER BVCEO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(ON) VBE(ON) hFE hFE hFE VCE=140V, VBE=1.5V VCE=110V, VBE=1.5V VCE=100V, VBE=1.5V, TC=150°C VCE=85V, VBE=1.5V, TC=150°C VCE=70V VCE=55V VEB=5.0V VEB=7.0V IC=200mA, VBE=1.5V IC=200mA, RBE≤50Ω IC=200mA IE=50mA IC=12A, IB=1.2A IC=10A, IB=1.0A IC=20A, IB=5.0A IC=20A, IB=5.0A VCE=5.0V, IC=12A VCE=5.0V, IC=10A VCE=5.0V, IC=2.0A VCE=5.0V, IC=10A VCE=5.0V, IC=12A - 50 - - - 10 - - - 20 - - - 5.0 - 50 150 - 110 - 90 - 7.0 - - 1.0 - - - 2.5 - 3.3 - 1.8 - - 50 250 - - 20 100 2N5039 MIN MAX - - - 50 - - - 10 - - - 20 - 15 - 50 120 - 95 - 75 - 7.0 - - - - 1.0 - 2.5 - 3.3 - - - 1.8 30 250 20 100 - - UNITS mA mA mA mA mA mA mA mA V V V V V V V V V V R1 (17-March 2015) 2N5038 2N5039 SILICON NPN POWER TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted) 2N5038 2N5039 SYMBOL TEST CONDITIONS MIN MAX MIN MAX fT VCE=10V, IC=2.0A, f=5.0MHz
2N5038 2N5039 SILICON NPN POWER TRANSISTORS w w w.
c e n t r a l s e m i .
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N5039 | NPN SILICON POWER TRANSISTORS | ON Semiconductor |
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2N5039 | Silicon NPN Power Transistors | Inchange Semiconductor |
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2N5039 | NPN HIGH POWER SILICON TRANSISTOR | Microsemi |
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2N5039 | NPN High Power Silicon Transistor | VPT |
 |
2N5039 | Silicon NPN Transistor | NTE |
| Part Number | Description |
|---|---|
| 2N5038 | SILICON NPN POWER TRANSISTORS |
| 2N5060 | SILICON CONTROLLED RECTIFIERS |
| 2N5061 | SILICON CONTROLLED RECTIFIERS |
| 2N5062 | SILICON CONTROLLED RECTIFIERS |
| 2N5063 | SILICON CONTROLLED RECTIFIERS |
| 2N5064 | SILICON CONTROLLED RECTIFIERS |
| 2N5067 | Silicon power Transistor |
| 2N5068 | Silicon power Transistor |
| 2N5069 | Silicon power Transistor |
| 2N5088 | SILICON NPN TRANSISTOR |