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2N4126 Datasheet SILICON TRANSISTORS

Manufacturer: Central Semiconductor

Download the 2N4126 datasheet PDF. This datasheet also includes the 2N4123 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (2N4123-CentralSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

: The CENTRAL SEMICONDUCTOR 2N4123 series devices are complementary silicon small signal transistors manufactured by the epitaxial planar process designed for general purpose amplifier and switching applications.

MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL 2N4123 2N4124 2N4125 2N4126 Collector-Base Voltage VCBO 40 30 30 25 Collector-Emitter Voltage VCEO 30 25 30 25 Emitter-Base Voltage VEBO 5.0 5.0 4.0 4.0 Continuous Collector Current IC 200 Power Dissipation PD 625 Power Dissipation (TC=25°C) PD 1.5 Operating and Storage Junction Temperature TJ, Tstg -65 to +150 Thermal Resistance JA 200 Thermal Resistance JC 83.3 UNITS V V V mA mW W °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C) 2N4123 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=20V - 50 IEBO VEB=3.0V - 50 BVCBO IC=10μA

Overview

2N4123 2N4124 NPN 2N4125 2N4126 PNP COMPLEMENTARY SILICON TRANSISTORS w w w.

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