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2N4031 Datasheet PNP Transistor

Manufacturer: Central Semiconductor

General Description

: The CENTRAL SEMICONDUCTOR 2N4031 is a silicon PNP transistor, mounted in a hermetically sealed package, designed for general purpose amplifier applications.

MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation PD Power Dissipation (TC=25°C) PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance JC Thermal Resistance JA 80 80 5.0 1.0 1.25 7.0 -65 to +200 20 140 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=60V ICBO VCB=60V, TA=150°C IEBO VEB=5.0V BVCBO IC=10µA 80 BVCEO IC=10mA 80 BVEBO IE=10µA 5.0 VCE(SAT) IC=150mA, IB=15mA VCE(SAT) IC=500mA, IB=50mA VBE(SAT) IC=150mA, IB=15mA VBE(ON) VCE=0.5V, IC=500mA hFE VCE=5.0V, IC=0.1mA 30 hFE VCE=5.0V, IC=100mA 40 hFE VCE=5.0V, IC=100mA, TA=–55°C 15 hFE VCE=5.0V, IC=500mA 25 hFE VCE=5.0V, IC=1.0A 10 MAX 50 50 10 0.15 0.5 0.9 1.1 120 UNITS V V V A W W °C °C/W °C/W UNITS nA µA µA V V V V V V V R0 (10-January 2020) 2N4031 PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX hfe VCE=10V, IC=50mA, f=100MHz 1.0 4.0 Cob VCB=10V, IE=0, f=1.0MHz 20 Cib VEB=0.5V, IC=0, f=1.0MHz 110 ton VCC=30V, IC=500mA, IB1=50mA 100 ts VCC=30V, IC=500mA, IB1=IB2=50mA 350 tf VCC=30V, IC=500mA, IB1=IB2=50mA 50 TO-39 CASE - MECHANICAL OUTLINE UNITS pF pF ns ns ns w w w.

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Overview

2N4031 PNP SILICON TRANSISTOR w w w.

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