2N3867
DESCRIPTION
: The CENTRAL SEMICONDUCTOR 2N3867 is a silicon PNP power transistor designed for high speed switching and amplifier applications.
MARKING: FULL PART NUMBER
TO-5 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Power Dissipation (TA=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance
VCBO VCEO VEBO
IC ICM IB PD PD TJ, Tstg JC JA
40 40 4.0 3.0 10 0.5 6.0 1.0 -65 to +200 29 175
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
ICBO ICEX BVCEO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) VBE(SAT) h FE h FE h FE h FE f T Cob
Cib
VCB=40V, TC=150°C VCE=40V, VBE=2.0V IC=20m A IE=100μA IC=500m A, IB=50m A IC=1.5A, IB=150m A IC=2.5A, IB=250m A IC=500m A,...
