2N3866A
DESCRIPTION
: The CENTRAL SEMICONDUCTOR 2N3866 and 2N3866A are Silicon NPN RF Transistors, mounted in a hermetically sealed package, designed for high frequency amplifier and oscillator applications. MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance VEBO IC IB PD TJ, Tstg ΘJC
55 30 3.5 0.4 2.0 5.0 -65 to +200 35 MAX 20 0.1 5.0 0.1 55 55 30 3.5 1.0 10 25 5.0 500 800 3.0 10 45 200 200
UNITS V V V A A W °C °C/W UNITS μA m A m A m A V V V V V
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEO VCE=28V ICEV ICEV IEBO BVCER BVCBO BVCEO BVEBO VCE(SAT) h FE h FE h FE f T f T Cob GPE η VCE=55V, VBE(OFF)=1.5V VCE=30V, VBE(OFF)=1.5V, TC=200°C VEB=3.5V IC=5.0m A, RBE=10Ω IC=500μA IC=5.0m A IE=100μA...
