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BTNA45N3 - NPN High Voltage Planar Transistor

Features

  • High breakdown voltage. (BVCEO=500V).
  • Low collector-emitter saturation voltage VCESAT.
  • High collector current capability IC and ICM.
  • High collector current gain HFE at high collector current IC.
  • Low collector output capacitance. (Typ. 5pF at VCB =20V).
  • Pb-free lead plating and halogen-free package. Symbol BTNA45N3 Outline SOT-23 C BE Ordering Information Device BTNA45N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free pa.

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Datasheet Details

Part number BTNA45N3
Manufacturer CYStech
File Size 279.24 KB
Description NPN High Voltage Planar Transistor
Datasheet download datasheet BTNA45N3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. NPN High Voltage Planar Transistor BTNA45N3 BVCEO IC VCESAT Spec. No. : C241N3 Issued Date : 2011.06.10 Revised Date : 2017.05.15 Page No. : 1/7 500V 150mA 150mV (max) Features • High breakdown voltage. (BVCEO=500V) • Low collector-emitter saturation voltage VCESAT. • High collector current capability IC and ICM. • High collector current gain HFE at high collector current IC. • Low collector output capacitance. (Typ. 5pF at VCB =20V) • Pb-free lead plating and halogen-free package.
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