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BTD2498N3 - High Voltage NPN Epitaxial Planar Transistor

Description

High breakdown voltage.

Low saturation voltage, typical VCE(sat) =0.13V at Ic/IB =20mA/1mA.

Complementary to BTB1498N3 Pb-free package Equivalent Circuit BTD2498N3 Outline SOT-23 B : Base C : Collector E : Emitter Absolute Maximum Ratings (Ta

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Datasheet Details

Part number BTD2498N3
Manufacturer CYStech
File Size 259.47 KB
Description High Voltage NPN Epitaxial Planar Transistor
Datasheet download datasheet BTD2498N3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor Built-in Base Resistor BTD2498N3 Spec. No. : C899N3 Issued Date : 2009.12.23 Revised Date : Page No. : 1/6 Description • High breakdown voltage. (BVCEO=400V) • Low saturation voltage, typical VCE(sat) =0.13V at Ic/IB =20mA/1mA.
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