Datasheet4U Logo Datasheet4U.com

BTD2012FP - NPN Epitaxial Planar Transistor

Features

  • www. DataSheet4U. com.
  • Low collector-to-emitter saturation voltage, typically VCE(SAT)=0.25V at IC / IB=2A / 0.2A.
  • Excellent DC current gain characteristics.
  • High allowable power dissipation, PD=25W(TC=25℃).
  • Large current capability.
  • Pb-free package.

📥 Download Datasheet

Datasheet Details

Part number BTD2012FP
Manufacturer Cystech Electonics
File Size 208.05 KB
Description NPN Epitaxial Planar Transistor
Datasheet download datasheet BTD2012FP Datasheet

Full PDF Text Transcription

Click to expand full text
CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C822FP Issued Date : 2005.07.29 Revised Date : Page No. : 1/ 5 BTD2012FP Features www.DataSheet4U.com • Low collector-to-emitter saturation voltage, typically VCE(SAT)=0.25V at IC / IB=2A / 0.2A • Excellent DC current gain characteristics • High allowable power dissipation, PD=25W(TC=25℃) • Large current capability • Pb-free package Applications • DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes. Symbol BTD2012FP Outline TO-220FP B:Base C:Collector E:Emitter B C E BTD2012FP CYStek Product Specification CYStech Electronics Corp.
Published: |