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CTL0452NS - N-Channel MOSFET

Description

The CTL0452NS uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .

Features

  • Drain-Source Breakdown Voltage VDSS 20 V.
  • Drain-Source On-Resistance RDS(ON) 22m, at VGS= 4.5V, IDS= 4.5A RDS(ON) 27m, at VGS= 2.5V, IDS= 4.0A.
  • Continuous Drain Current at TC=25℃ ID = 4.5A.
  • Advanced high cell density Trench Technology.
  • RoHS Compliance & Halogen Free.

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Datasheet Details

Part number CTL0452NS
Manufacturer CT Micro
File Size 813.53 KB
Description N-Channel MOSFET
Datasheet download datasheet CTL0452NS Datasheet

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Full PDF Text Transcription

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CTL0452NS N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 20 V  Drain-Source On-Resistance RDS(ON) 22m, at VGS= 4.5V, IDS= 4.5A RDS(ON) 27m, at VGS= 2.5V, IDS= 4.0A  Continuous Drain Current at TC=25℃ ID = 4.5A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Applications  Power Management  Lithium Ion Battery Description The CTL0452NS uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .
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