Datasheet4U Logo Datasheet4U.com

CTL0422PS-R3 - P-Channel MOSFET

Description

The CTL0422PS-R3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • Drain-Source Breakdown Voltage VDSS -20 V.
  • Drain-Source On-Resistance RDS(ON) 45m, at VGS= -4.5V, ID= -4.0A RDS(ON) 52m, at VGS= -2.5V, ID= -3.0A RDS(ON) 60m, at VGS= -1.8V, ID= -2.0A.
  • Continuous Drain Current at TC=25℃ID = -4.0A.
  • Advanced high cell density Trench Technology.
  • RoHS Compliance & Halogen Free.

📥 Download Datasheet

Datasheet Details

Part number CTL0422PS-R3
Manufacturer CT Micro
File Size 898.30 KB
Description P-Channel MOSFET
Datasheet download datasheet CTL0422PS-R3 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CTL005 AVERAGE RESPONDING AC CURRENT TRANSDUCERS Red Lion
CTL050 AVERAGE RESPONDING AC CURRENT TRANSDUCERS Red Lion
CTL-10-S50-30F-CL Clamp-on type AC Current Sensor PRC Technologies
CTL-12-S30-2.5Z AC Current Sensor URD
CTL-12-S36-10 AC Current Sensor URD

Other Datasheets by CT Micro

Part Number Description
CTL0423PS P-Channel MOSFET
CTL0404NS-R3 N-Channel MOSFET
CTL0412ND N-Channel MOSFET
CTL0452NS N-Channel MOSFET
CTL0015PS-R3 P-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
CTL0422PS-R3 P-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS -20 V  Drain-Source On-Resistance RDS(ON) 45m, at VGS= -4.5V, ID= -4.0A RDS(ON) 52m, at VGS= -2.5V, ID= -3.0A RDS(ON) 60m, at VGS= -1.8V, ID= -2.0A  Continuous Drain Current at TC=25℃ID = -4.0A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Applications  Power Management  Lithium Ion Battery Description The CTL0422PS-R3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
Published: |