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HPB600R380PC-G - Silicon N-Channel Power MOSFET

Description

HPB600R380PC-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy.

Features

  • l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free 650 V 11 A 85 W 0.35 Ω 1.4 uJ.

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Datasheet Details

Part number HPB600R380PC-G
Manufacturer CR Micro
File Size 456.24 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HPB600R380PC-G Datasheet

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Full PDF Text Transcription (Reference)

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Silicon N-Channel Power MOSFET ○R HPB600R380PC-G General Description： HPB600R380PC-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package type is TO-263, which accords with the RoHS standard. VDSS(Tjmax) ID PD(TC=25℃) RDS(ON)Typ Eoss@400V Features： l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free 650 V 11 A 85 W 0.35 Ω 1.4 uJ Applications： Power switch circuit of adaptor and charger.
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