Datasheet4U Logo Datasheet4U.com

HPB600R280PC-G - Silicon N-Channel Power MOSFET

Description

HPB600R280PC-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy.

Features

  • l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free 650 V 15 A 206 W 0.22 Ω 2.4 uJ.

📥 Download Datasheet

Datasheet Details

Part number HPB600R280PC-G
Manufacturer CR Micro
File Size 516.53 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HPB600R280PC-G Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by CR Micro

Part Number Description
HPB600R380PC-G Silicon N-Channel Power MOSFET
HPB700R450PC-G Silicon N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon N-Channel Power MOSFET ○R HPB600R280PC-G General Description： HPB600R280PC-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package type is TO-263, which accords with the RoHS standard. VDSS(Tjmax) ID PD(TC=25℃) RDS(ON)Typ Eoss@400V Features： l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free 650 V 15 A 206 W 0.22 Ω 2.4 uJ Applications： Power switch circuit of adaptor ,PC and LED power.
Published: |