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Silicon N-Channel Power MOSFET
○R
CS8N25F A9R
General Description：
VDSS
250
CS8N25F A9R, the silicon N-channel Enhanced
ID
8
VDMOSFETs, is obtained by the self-aligned planar Technology
PD(TC=25℃)
30
which reduce the conduction loss, improve switching
RDS(ON)Typ
0.36
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
Features：
Fast Switching
Low ON Resistance(Rdson≤0.47Ω)
Low Gate Charge (Typical Data: 12.8nC)
Low Reverse transfer capacitances(Typical: 7.9pF)
100% Single Pulse avalanche energy Test
Applications：
Automotive、DC Motor Control and Class D Amplifier.
CS8N25FA9R Datasheet
