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Silicon N-Channel Trench MOSFET
○R
CS8N05 AEP-G
General Description：
VDSS
45
V
CS8N05 AEP-G,the silicon N-channel Enhanced VDMOSFETs, is ID
8
A
obtained by advanced trench Technology which reduce the PD(TC=25℃)
3.1
W
conduction loss, improve switching performance and
RDS(ON)Typ (VGS=10V)
15
mΩ
enhance the avalanche energy. The transistor can be used in various
power switching circuit for system miniaturization and higher
efficiency. The package form is SOP-8, which accords with the
RoHS standard.
Features：
l Fast Switching
l Low ON Resistance (Rdson≤25mΩ)
l Low Reverse transfer capacitances(Typical:71pF)
l 100% Single Pulse avalanche energy Test
l Halogen free
Applications：
Power switch circuit of adaptor and charger.
CS8N05AEP-G Datasheet
