CS55N25FA9R - Silicon N-Channel Power MOSFET

CR Micro

General Description

performance and enhance the avalanche energy.

Key Features

Fast Switching.
Low ON Resistance.
Low Gate Charge.
Low Reverse transfer capacitances.
100% Single Pulse avalanche energy Test.

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CS55N25FA9R silicon n-channel power mosfet by CR Micro - Datasheet Preview

Datasheet Details

Part number	CS55N25FA9R
Manufacturer	CR Micro
File Size	795.03 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS55N25FA9R Datasheet

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Silicon N-Channel Power MOSFET ○R CS55N25F A9R General Description： CS55N25F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features：  Fast Switching  Low ON Resistance  Low Gate Charge  Low Reverse transfer capacitances  100% Single Pulse avalanche energy Test Applications： Power switch circuit of electron ballast and adaptor.