CS55N06A4 - Silicon N-Channel Power MOSFET

CR Micro

General Description

CS55N06 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trenchtechnology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

l Fast Switching l ESD Improved Capability l Low ON Resistance l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test VDSS ID RDS(ON)Typ 60 V 55 A 10 mΩ.

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CS55N06A4 silicon n-channel power mosfet by CR Micro - Datasheet Preview

Datasheet Details

Part number	CS55N06A4
Manufacturer	CR Micro
File Size	2.01 MB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS55N06A4 Datasheet

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Full PDF Text Transcription (Reference)

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Silicon N-Channel Power Trench MOSFET ○R CS55N06 A4 General Description： CS55N06 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trenchtechnology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features： l Fast Switching l ESD Improved Capability l Low ON Resistance l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test VDSS ID RDS(ON)Typ 60 V 55 A 10 mΩ Applications： Power switch circuit of adaptor and charger.