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Silicon N-Channel Power MOSFET
○R
CS1N60 C4D
General Description：
VDSS
600
V
CS1N60 C4D, the silicon N-channel Enhanced ID
1.5
A
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃)
32
W
which reduce the conduction loss, improve switching
RDS(ON)Typ
7.0
Ω
performance and enhance the avalanche energy. The
transistor can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-252,
which accords with the RoHS standard.
Features：
l Fast Switching l ESD Improved Capability
l Low Gate Charge (Typical Data:7.5nC) l Low Reverse transfer capacitances(Typical:5.0pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CS1N60C4D Datasheet
