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CS1N50ATR - Silicon N-Channel Power MOSFET

Description

performance and enhance the avalanche energy.

Features

  • l Fast Switching l Low ON Resistance(Rdson≤10Ω) l Low Gate Charge (Typical Data: 6.2nC) l Low Reverse transfer capacitances(Typical:2.5pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS1N50ATR
Manufacturer CR Micro
File Size 318.01 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS1N50ATR Datasheet
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Silicon N-Channel Power MOSFET ○R CS1N50 ATR General Description: CS1N50 ATR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-89, which accords with the RoHS standard. Features: l Fast Switching l Low ON Resistance(Rdson≤10Ω) l Low Gate Charge (Typical Data: 6.2nC) l Low Reverse transfer capacitances(Typical:2.5pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger.
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