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CS10N65ARR-G - Silicon N-Channel Power MOSFET

General Description

CS10N65 ARR-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

  • Fast Switching VDSS ID PD(TC=25℃) RDS(ON)Typ 650 V 10 A 130 W 0.86 Ω.
  • Low ON Resistance(Rdson≤1.0Ω).
  • Low Gate Charge (Typical Data:32nC).
  • Low Reverse transfer capacitances(Typical:7pF).
  • 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS10N65ARR-G
Manufacturer CR Micro
File Size 453.88 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS10N65ARR-G Datasheet

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Silicon N-Channel Power MOSFET ○R CS10N65 ARR-G General Description： CS10N65 ARR-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-262, which accords with the RoHS standard. Features：  Fast Switching VDSS ID PD(TC=25℃) RDS(ON)Typ 650 V 10 A 130 W 0.86 Ω  Low ON Resistance(Rdson≤1.0Ω)  Low Gate Charge (Typical Data:32nC)  Low Reverse transfer capacitances(Typical:7pF)  100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.