CS10N06BE-G - Silicon N-Channel Power MOSFET

CR Micro

General Description

performance and enhance the avalanche energy.

suitable for use as a load switch and PWM applications..

Key Features

Fast Switching.
Low ON Resistance(Rdson≤16 mΩ).
Low Gate Charge.
Low Reverse transfer capacitances.
100% Single Pulse avalanche energy Test.

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CS10N06BE-G silicon n-channel power mosfet by CR Micro - Datasheet Preview

Datasheet Details

Part number	CS10N06BE-G
Manufacturer	CR Micro
File Size	680.90 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS10N06BE-G Datasheet

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Full PDF Text Transcription (Reference)

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Silicon N-Channel Power MOSFET ○R CS10N06 BE-G General Description： CS10N06 BE-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications.. The package form is SOP-8, which accords with the RoHS standard. Features：  Fast Switching  Low ON Resistance(Rdson≤16 mΩ)  Low Gate Charge  Low Reverse transfer capacitances  100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger; LED backlight driver.