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Silicon N-Channel Power MOSFET
○R
CS01N60 ASRD-G
General Description：
VDSS
600
V
CS01N60 ASRD-G, the silicon N-channel Enhanced ID
0.04
A
VDMOSFETs, is obtained by the self-aligned planar Technology PD(TA=25℃)
0.5
W
which reduce the conduction loss, improve switching
RDS(ON)Typ
160
Ω
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is SOT-23,
which accords with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdson≤500Ω) l Low Gate Charge (Typical Data:3.1nC) l Low Reverse transfer capacitances(Typical:1.3pF) l Halogen Free
Applications：
TV power.
CS01N60ASRD-G Datasheet
