Click to expand full text
Silicon N-Channel Power MOSFET
○R
CS01N100 A4R
General Description：
CS01N100 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-252,
which accords with the RoHS standard.
Features：
Fast Switching
Low ON Resistance(Rdson≤110Ω)
Low Gate Charge (Typical Data:8nC)
Low Reverse transfer capacitances(Typical:2.67pF)
100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CS01N100A4R Datasheet
