Datasheet4U Logo Datasheet4U.com

CEB140N10 - N-Channel MOSFET

Features

  • 100V, 137A, RDS(ON) = 7.5mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S.

📥 Download Datasheet

Datasheet Details

Part number CEB140N10
Manufacturer CET
File Size 415.92 KB
Description N-Channel MOSFET
Datasheet download datasheet CEB140N10 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CEB1012 N-Channel Enhancement Mode Field Transistor Chino-Excel Technology
CEB1012L N-Channel Enhancement Mode Field Transistor Chino-Excel Technology
CEB16N10L N-Channel MOSFET VBsemi
CEB4050A N-Channel Enhancement Mode Field Transistor Chino-Excel Technology
CEB4050AL N-Channel Enhancement Mode Field Effect Transistor Chino-Excel Technology

Other Datasheets by CET

Part Number Description
CEB14A04 N-Channel Enhancement Mode Field Effect Transistor
CEB14G04 N-Channel Enhancement Mode Field Effect Transistor
CEB14N5 N-Channel Enhancement Mode Field Effect Transistor
CEB14P20 P-Channel MOSFET
CEB10N4 N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
CEP140N10/CEB140N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 137A, RDS(ON) = 7.5mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 100 VGS ±20 Drain Current-Continuous @ TC = 25 C Drain Current-Continuous @ TC = 100 C Drain Current-Pulsed a ID IDM 137 87 548 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 208 1.
Published: |