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NE68119 - NPN SILICON EPITAXIAL TRANSISTOR

Description

amplifiers from VHF band to UHF band.

Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity.

Features

  • Low Voltage Use.
  • High fT : 7.0 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz).
  • Low Cre : 0.45 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz).
  • Low NF : 1.4 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz).
  • High |S21e|2: 12 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz).
  • Ultra Super Mini Mold Package.

📥 Download Datasheet

Datasheet Details

Part number NE68119
Manufacturer CEL
File Size 1.81 MB
Description NPN SILICON EPITAXIAL TRANSISTOR
Datasheet download datasheet NE68119 Datasheet

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Full PDF Text Transcription

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DATA SHEET SILICON TRANSISTOR NE68119 / 2SC5007 JEITA Part No. NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD 1.6±0.1-OUT 1.0 0.5 0.5 0.2–+00.1 DESCRIPTION The NE68119 / 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which is a proprietary fabrication technique. +0.1 –0 0.3 +0.1 –0.05 FEATURES • Low Voltage Use. • High fT : 7.0 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) • Low Cre : 0.45 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) • Low NF : 1.4 dB TYP.
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