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CSD655 - NPN EPITAXIAL PLANAR SILICON TRANSISTOR

Description

SYMBOL VALUE VCBO 30 Collector -Base Voltage VCEO 15 Collector -Emitter Voltage VEBO 5.0 Emitter Base Voltage IC 700 Collector Current ICP 1.0 Peak PC 500 Collector Power Dissipation Tj, Tstg -55 to +150 Operating And Storage Junction Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless

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Datasheet Details

Part number CSD655
Manufacturer CDIL
File Size 99.03 KB
Description NPN EPITAXIAL PLANAR SILICON TRANSISTOR
Datasheet download datasheet CSD655 Datasheet

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www.DataSheet4U.com Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 700000 IS / IECQC 750100 NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSD655 (9AW) TO-92 BCE Marking : As Below ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL VALUE VCBO 30 Collector -Base Voltage VCEO 15 Collector -Emitter Voltage VEBO 5.0 Emitter Base Voltage IC 700 Collector Current ICP 1.
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