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N-Channel Trench Power MOSFET
CSD60N100
General Description
The CSD60N100 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). Those devices are suitable for use in PWM, load switching and general purpose applications.
Features
● VDS=60V; ID=45A RDS(ON)<15mΩ @ VGS=10V
● Ultra Low On-Resistance ● High UIS and UIS 100% Test
Application
● Power switching application ● load switching
To-252 Top View
Schematic Diagram
VDS =60V ID = 45A
RDS(ON)= 11mΩ
Package Marking and Ordering Information
Device Marking
Device
Device Package
CSD60N100
CSD60N100
TO-252
Reel Size -
Table 1.
CSD60N100 Datasheet
