Click to expand full text
CSJ75N62/CSJ75N62A
N-Channel Trench Power MOSFET
General Description
The CSJ75N62 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM.
Features
● VDS=75V; ID=92A@ VGS=10V; RDS(ON)<7.45mΩ @ VGS=10V
● Ultra Low On-Resistance
● High UIS and UIS 100% Test
To-263 Top View
Schematic Diagram
Application
● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply
VDS = 75 V ID = 92A
RDS(ON) = 6.2 mΩ
Package Marking and Ordering Information
Device
Device Marking
Device Package
CSJ75N62
CSJ75N62
TO-263
CSJ75N62A
CSJ75N62
TO-263
Package Typ Tape&Reel Tube
Quantity 800pcs 50pcs
Table 1.
CSJ75N62A Datasheet
