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N-Channel Trench Power MOSFET
General Description
The CSJ60N53 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching applications.
Features
● VDS=60V；ID=92A@ VGS=10V； RDS(ON)<6.6mΩ @ VGS=10V
● Ultra Low On-Resistance ● High UIS and UIS 100% Test
Application
● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply
CSJ60N53
To-263 Top View
Schematic Diagram
VDS = 60V ID = 92A
RDS(ON) = 5.5mΩ
Package Marking and Ordering Information
Device
Device Marking
Device Package
CSJ60N53
CSJ60N53
TO-263
Package Typ Tape&Reel
Quantity 800pcs
Table 1.
CSJ60N53 Datasheet
