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BS616LV2016 - Very Low Power CMOS SRAM

Description

The BS616LV2016 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 by 16 bits and operates form a wide range of 2.4V to 5.5V supply voltage.

Features

  • Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 30mA (Max. ) at 55ns 2mA (Max. ) at 1MHz Standby current : 0.1uA (Typ. ) at 25 OC VCC = 5.0V Operation current : 62mA (Max. ) at 55ns 8mA (Max. ) at 1MHz Standby current : 0.6uA (Typ. ) at 25OC Ÿ High speed access time : -55 55ns(Max. ) at VCC=3.0~5.5V -70 70ns(Max. ) at VCC=2.7~5.5V Ÿ Automatic power down when chip is deselected Ÿ Easy expansion with CE and OE options Ÿ I/O Configuration x8/x16 sele.

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Datasheet Details

Part number BS616LV2016
Manufacturer Brilliance Semiconductor
File Size 207.46 KB
Description Very Low Power CMOS SRAM
Datasheet download datasheet BS616LV2016 Datasheet

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Part Number Description
BS616LV2010 Very Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616LV2011 Very Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616LV2012 Very Low Power/Voltage CMOS SRAM
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BS616LV2015 Very Low Power/Voltage CMOS SRAM 128K X 16 bit

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Very Low Power CMOS SRAM 128K X 16 bit Pb-Free and Green package materials are compliant to RoHS BS616LV2016 n FEATURES Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 30mA (Max.) at 55ns 2mA (Max.) at 1MHz Standby current : 0.1uA (Typ.) at 25 OC VCC = 5.0V Operation current : 62mA (Max.) at 55ns 8mA (Max.) at 1MHz Standby current : 0.6uA (Typ.) at 25OC Ÿ High speed access time : -55 55ns(Max.) at VCC=3.0~5.5V -70 70ns(Max.) at VCC=2.7~5.5V Ÿ Automatic power down when chip is deselected Ÿ Easy expansion with CE and OE options Ÿ I/O Configuration x8/x16 selectable by LB and UB pin. Ÿ Three state outputs and TTL compatible Ÿ Fully static operation Ÿ Data retention supply voltage as low as 1.
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