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BCG008
8W GaN Power Transistor
8W GaN Power Transistor (0.15µm x 1250µm gate)
The BeRex BCG008 is a GaN Power HEMT die with a nominal 0.15 micron gate length and 1250 micron gate width making the product ideally suited for amplifier applications where high-gain and high power from DC to 26 GHz. The product may be used in either wideband or narrow-band applications. The BCG008 is produced using state of the art metallization with SI3N4 passivation and is screened to assure reliability.
Product Features
• 39.0 dBm Typical Saturated Output Power (P3dB) @ 12 GHz • 9.5 dB Typical Saturated gain (G3dB) @ 12 GHz • 72 % PAE Typical @ 12 GHz • 0.15 X 1250 Micron Recessed Gate
Applications
• Commercial • Military / Hi-Rel.
BCG008 Datasheet
