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BCG002
2W GaN Power Transistor
2W GaN Power Transistor (0.15µm x 480µm gate)
The BeRex BCG002 is a GaN Power HEMT die with a nominal 0.15 micron gate length and 480 micron gate width making the product ideally suited for amplifier applications where high-gain and high power from DC to 26 GHz. The product may be used in either wideband or narrow-band applications. The BCG002 is produced using state of the art metallization with SI3N4 passivation and is screened to assure reliability.
Product Features
• 33.5 dBm Typical Saturated Output Power (P3dB) @ 12 GHz • 12.5 dB Typical Saturated gain (G3dB) @ 12 GHz • 55 % PAE Typical @ 12 GHz • 0.15 X 480 Micron Recessed Gate
Applications
• Commercial • Military / Hi-Rel.
BCG002 Datasheet
