AM2324N
Analog Power
N-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones.
- Low r DS(on) provides higher efficiency and extends battery life
- Low thermal impedance copper leadframe SOT-23 saves board space
- Fast switching speed
- High performance trench technology
PRODUCT SUMMARY
VDS (V) r DS(on) (Ω)
0.047 @ VGS = 4.5V
20 0.055@ VGS = 2.5V
0.087@ VGS = 1.8V
ID (A) 4.3 4.0 3.2
ABSOLUTE MAXIMUMRATINGS (TA = 25 o CUNLESS OTHERWISE NOTED)
Parameter
Symbol Ratings Units
Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta
Pulsed Drain Currentb
TA=25o C TA=70o C
20 V
±8 4.3 3.6 A 10
Continuous Source Current (Diode Conduction)a
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