AM2328NE
Analog Power N-Channel 20V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones.
PRODUCT SUMMARY VDS (V) r DS(on) (Ω) 0.018 @ VGS = 4.5 V 20 0.021 @ VGS = 2.5V
SOT-23 Top View
ID (A) 7.0 6.5
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Low r DS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOT-23 saves board space Fast switching speed High performance trench technology
S N-Channel MOSFET
ESD Protected 2000V o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units Drain-Source Voltage VDS 20 V ±8 Gate-Source Voltage VGS
.Data Sheet.co.kr
Continuous Drain Current Pulsed Drain Current b a
TA=25 C TA=70 C o o
ID IDM
7.0...
