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HMC907LP5E - GaAs pHEMT MMIC POWER AMPLIFIER

Description

The HMC907LP5E is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between 0.2 and 22 GHz.

This self-biased power amplifier provides 12 dB of gain, +36 dBm output IP3 and +26 dBm of output power at 1 dB gain compression while requiring only 350 mA from a +10 V supply.

Features

  • High P1dB Output Power: +26 dBm High Gain: 12 dB High Output IP3: +36 dBm Single Supply: +10 V @ 350 mA 50 Ohm Matched Input/Output 32 Lead 5x5 mm SMT Package: 25 mm² General.

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Datasheet Details

Part number HMC907LP5E
Manufacturer Analog Devices
File Size 495.85 KB
Description GaAs pHEMT MMIC POWER AMPLIFIER
Datasheet download datasheet HMC907LP5E Datasheet
Additional preview pages of the HMC907LP5E datasheet.

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Full PDF Text Transcription

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v00.0510 Typical Applications The HMC907LP5E is ideal for: • Test Instrumentation • Microwave Radio & VSAT • Military & Space 9 • Telecom Infrastructure • Fiber Optics Functional Diagram HMC907LP5E GaAs pHEMT MMIC POWER AMPLIFIER, 0.2 - 22 GHz Features High P1dB Output Power: +26 dBm High Gain: 12 dB High Output IP3: +36 dBm Single Supply: +10 V @ 350 mA 50 Ohm Matched Input/Output 32 Lead 5x5 mm SMT Package: 25 mm² General Description The HMC907LP5E is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between 0.2 and 22 GHz. This self-biased power amplifier provides 12 dB of gain, +36 dBm output IP3 and +26 dBm of output power at 1 dB gain compression while requiring only 350 mA from a +10 V supply. Gain flatness is excellent at ±0.7 dB from 0.
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