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HMC818LP4E - GaAs SMT pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER

Description

The HMC818LP4E is a GaAs pHEMT Dual Channel Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 1.7 - 2.2 GHz.

Features

  • The HMC818LP4E is ideal for: Low Noise Figure: 0.85 dB.
  • Cellular/3G and LTE/WiMAX/4G High Gain: 20.5 dB.
  • BTS & Infrastructure High OIP3: +35 dBm.
  • Repeaters and Femtocells Single Supply: +3V to +5V.
  • Public Safety Radios LETE Functional Diagram 50 Ohm Matched Input/Output 24 Lead 4x4mm QFN Package: 16mm² General.

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Full PDF Text Transcription

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Amplifiers - Low Noise - SMT 7 7-1 HMC818LP4E v01.0809 GaAs SMT pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features The HMC818LP4E is ideal for: Low Noise Figure: 0.85 dB • Cellular/3G and LTE/WiMAX/4G High Gain: 20.5 dB • BTS & Infrastructure High OIP3: +35 dBm • Repeaters and Femtocells Single Supply: +3V to +5V • Public Safety Radios LETE Functional Diagram 50 Ohm Matched Input/Output 24 Lead 4x4mm QFN Package: 16mm² General Description The HMC818LP4E is a GaAs pHEMT Dual Channel Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 1.7 - 2.2 GHz. The amplifier has been optimized to provide 0.85 dB noise figure, 20.5 dB gain and +35 dBm output IP3 from a single supply of +5V.
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