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HMC8119 - E-Band I/Q Upconverter

Description

The HMC8119 is an integrated E-band gallium arsenide (GaAs) pseudomorphic (pHEMT) monolithic microwave integrated circuit (MMIC), in-phase/quadrature (I/Q) upconverter chip that operates from 81 GHz to 86 GHz.

Features

  • Conversion loss: 10 dB typical Sideband rejection: 22 dBc typical Input power for 1 dB compression (P1dB): 16 dBm typical Input third-order intercept (IP3): 24 dBm typical Input second-order intercept (IP2):.
  • 5 dBm typical 6× local oscillator (LO) leakage at RFOUT:.
  • 23 dBm typical RF return loss: 12 dB typical LO return loss: 20 dB typical Die size: 3.601 mm × 1.609 mm × 0.05 mm.

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Datasheet Details

Part number HMC8119
Manufacturer Analog Devices
File Size 549.13 KB
Description E-Band I/Q Upconverter
Datasheet download datasheet HMC8119 Datasheet
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Full PDF Text Transcription

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Data Sheet 81 GHz to 86 GHz, E-Band I/Q Upconverter HMC8119 FEATURES Conversion loss: 10 dB typical Sideband rejection: 22 dBc typical Input power for 1 dB compression (P1dB): 16 dBm typical Input third-order intercept (IP3): 24 dBm typical Input second-order intercept (IP2): −5 dBm typical 6× local oscillator (LO) leakage at RFOUT: −23 dBm typical RF return loss: 12 dB typical LO return loss: 20 dB typical Die size: 3.601 mm × 1.609 mm × 0.05 mm APPLICATIONS E-band communication systems High capacity wireless backhaul Test and measurement GENERAL DESCRIPTION The HMC8119 is an integrated E-band gallium arsenide (GaAs) pseudomorphic (pHEMT) monolithic microwave integrated circuit (MMIC), in-phase/quadrature (I/Q) upconverter chip that operates from 81 GHz to 86 GHz.
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