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HMC816LP4E - SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER

Description

The HMC816LP4E is a GaAs pHEMT Dual Channel Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 230 and 660 MHz.

Features

  • Low Noise Figure: 0.5 dB.
  • Cellular/3G and LTE/WiMAX/4G High Gain: 22 dB.
  • BTS & Infrastructure High Output IP3: +37 dBm.
  • Repeaters and Femtocells Single Supply: +3V to +5V.
  • Public Safety Radio.
  • Multi-Channel.

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Full PDF Text Transcription

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Amplifiers - Low Noise - SMT 7 7-1 HMC816LP4E v00.1108 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz Typical Applications The HMC816LP4E is ideal for: Features Low Noise Figure: 0.5 dB • Cellular/3G and LTE/WiMAX/4G High Gain: 22 dB • BTS & Infrastructure High Output IP3: +37 dBm • Repeaters and Femtocells Single Supply: +3V to +5V • Public Safety Radio • Multi-Channel Applications OLETE Functional Diagram 50 Ohm Matched Input/Output 24 Lead 4x4mm QFN Package: 16 mm2 General Description The HMC816LP4E is a GaAs pHEMT Dual Channel Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 230 and 660 MHz. The amplifier has been optimized to provide 0.
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