Datasheet4U Logo Datasheet4U.com

HMC756 - GaAs PHEMT MMIC 1WATT POWER AMPLIFIER

Description

The HMC756 is a three stage GaAs PHEMT MMIC 1 Watt Power Amplifier which operates between 16 and 24 GHz.

The HMC756 provides 23 dB of gain, and +33 dBm of saturated output power at 28% PAE from a +7V supply.

Features

  • Saturated Output Power: +33 dBm @ 28% PAE High Output IP3: +41 dBm High Gain: 23 dB DC Supply: +7V @ 790mA DC Blocked RF I/Os No External Matching Required Die Size: 2.4 x 1.6 x 0.1 mm General.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HMC753LP4E Low Noise Amplifier SMT Hittite Microwave Corporation
HMC757 GaAs pHEMT MMIC 1/2 WATT POWER AMPLIFIER Hittite Microwave Corporation
HMC758LP3 GaAs SMT PHEMT LOW NOISE AMPLIFIER Hittite Microwave Corporation
HMC758LP3E GaAs SMT PHEMT LOW NOISE AMPLIFIER Hittite Microwave Corporation
HMC7590 43 Gbps Transimpedance Amplifier Hittite

Other Datasheets by Analog Devices

Part Number Description
HMC750LP4 12.5Gbps LIMITING AMPLIFIER
HMC750LP4E 12.5Gbps LIMITING AMPLIFIER
HMC751LC4 SMT pHEMT LOW NOISE AMPLIFIER
HMC752LC4 GaAs HEMT MMIC LOW NOISE AMPLIFIER
HMC753 MMIC Low Noise Amplifier

Full PDF Text Transcription

Click to expand full text
Amplifiers - Linear & Power - Chip v02.0110 Typical Applications The HMC756 is ideal for: • Point-to-Point Radios 3 • Point-to-Multi-Point Radios • VSAT • Military & Space Functional Diagram HMC756 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 16 - 24 GHz Features Saturated Output Power: +33 dBm @ 28% PAE High Output IP3: +41 dBm High Gain: 23 dB DC Supply: +7V @ 790mA DC Blocked RF I/Os No External Matching Required Die Size: 2.4 x 1.6 x 0.1 mm General Description The HMC756 is a three stage GaAs PHEMT MMIC 1 Watt Power Amplifier which operates between 16 and 24 GHz. The HMC756 provides 23 dB of gain, and +33 dBm of saturated output power at 28% PAE from a +7V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs).
Published: |