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HMC757 - GaAs pHEMT MMIC 1/2 WATT POWER AMPLIFIER

Description

The HMC757 is a three stage GaAs pHEMT MMIC 1/2 Watt Power Amplifier which operates between 16 and 24 GHz.

The HMC757 provides 22 dB of gain, and +30 dBm of saturated output power at 30% PAE from a +7V supply.

Features

  • Saturated Output Power: +30 dBm @ 30% PAE High Output IP3: +37 dBm High Gain: 22 dB DC Supply: +7V @ 395 mA 50 Ohm Matched Input/Output Die Size: 2.4 x 0.9 x 0.1 mm 3 LINEAR & POWER.

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Datasheet Details

Part number HMC757
Manufacturer Hittite Microwave Corporation
File Size 313.54 KB
Description GaAs pHEMT MMIC 1/2 WATT POWER AMPLIFIER
Datasheet download datasheet HMC757 Datasheet

Full PDF Text Transcription

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HMC757 v00.0409 GaAs pHEMT MMIC 1/2 WATT POWER AMPLIFIER, 16 - 24 GHz Typical Applications The HMC757 is ideal for: • Point-to-Point Radios Features Saturated Output Power: +30 dBm @ 30% PAE High Output IP3: +37 dBm High Gain: 22 dB DC Supply: +7V @ 395 mA 50 Ohm Matched Input/Output Die Size: 2.4 x 0.9 x 0.1 mm 3 LINEAR & POWER AMPLIFIERS - CHIP • Point-to-Multi-Point Radios • VSAT • Military & Space Functional Diagram General Description The HMC757 is a three stage GaAs pHEMT MMIC 1/2 Watt Power Amplifier which operates between 16 and 24 GHz. The HMC757 provides 22 dB of gain, and +30 dBm of saturated output power at 30% PAE from a +7V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-ChipModules (MCMs).
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