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HMC457QS16GE - InGaP HBT

Download the HMC457QS16GE datasheet PDF (HMC457QS16G included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for ingap hbt.

Description

The HMC457QS16G & HMC457QS16GE are high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifiers operating between 1.7 and 2.2 GHz.

Features

  • Output IP3: +46 dBm Gain: 27 dB @ 1900 MHz 48% PAE @ +32 dBm Pout +25 dBm W-CDMA Channel Power @ -50 dBc ACPR Integrated Power Control (Vpd) QSOP16G SMT Package: 29.4 mm2 Included in the HMC-DK002 Designer’s Kit LINEAR & POWER.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMC457QS16G_HittiteMicrowaveCorporation.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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HMC457QS16G / 457QS16GE v03.0907 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz 11 Typical Applications The HMC457QS16G / HMC457QS16GE is ideal for applications requiring a high dynamic range amplifier: • CDMA & W-CDMA • GSM, GPRS & Edge • Base Stations & Repeaters Features Output IP3: +46 dBm Gain: 27 dB @ 1900 MHz 48% PAE @ +32 dBm Pout +25 dBm W-CDMA Channel Power @ -50 dBc ACPR Integrated Power Control (Vpd) QSOP16G SMT Package: 29.4 mm2 Included in the HMC-DK002 Designer’s Kit LINEAR & POWER AMPLIFIERS - SMT Functional Diagram General Description The HMC457QS16G & HMC457QS16GE are high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifiers operating between 1.7 and 2.2 GHz.
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