Datasheet4U Logo Datasheet4U.com

HMC452QS16G - InGaP HBT

Description

The HMC452QS16G & HMC452QS16GE are high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifiers operating between 0.4 and 2.2 GHz.

Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 22.5 dB at 0.4 GHz and 9 dB at 2.1 GHz.

Features

  • The HMC452QS16G / HMC452QS16GE is ideal for.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HMC403S8G HBT DIGITAL PHASE-FREQUENCY DETECTOR Hittite Microwave Corporation
HMC409LP4 GaAs InGaP HBT Hittite Microwave Corporation
HMC410MS8G GaAs MMIC Hittite Microwave Corporation
HMC411MS8G GaAs MMIC Hittite Microwave Corporation
HMC425 0.5 dB LSB GaAs MMIC Hittite Microwave Corporation

Other Datasheets by Analog Devices

Part Number Description
HMC452QS16GE InGaP HBT
HMC452ST89 InGaP HBT
HMC452ST89E InGaP HBT
HMC450QS16G GaAs InGaP HBT MMIC
HMC450QS16GE GaAs InGaP HBT MMIC

Full PDF Text Transcription

Click to expand full text
HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz LINEAR & POWER AMPLIFIERS - SMT 11 11 - 134 Typical Applications Features The HMC452QS16G / HMC452QS16GE is ideal for applications requiring a high dynamic range amplifier: • GSM, GPRS & EDGE • CDMA & W-CDMA • CATV/Cable Modem • Fixed Wireless & WLL Output IP3: +48 dBm 22.5 dB Gain @ 400 MHz 9 dB Gain @ 2100 MHz 53% PAE @ +31 dBm Pout +24 dBm CDMA2000 Channel Power@ -45 dBc ACP Single +5V Supply Integrated Power Control (VPD) QSOP16G SMT Package: 29.4 mm2 Functional Diagram General Description The HMC452QS16G & HMC452QS16GE are high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifiers operating between 0.4 and 2.2 GHz.
Published: |