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HMC452QS16GE - InGaP HBT

Download the HMC452QS16GE datasheet PDF. This datasheet also covers the HMC452QS16G variant, as both devices belong to the same ingap hbt family and are provided as variant models within a single manufacturer datasheet.

Description

The HMC452QS16G & HMC452QS16GE are high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifiers operating between 0.4 and 2.2 GHz.

Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 22.5 dB at 0.4 GHz and 9 dB at 2.1 GHz.

Features

  • The HMC452QS16G / HMC452QS16GE is ideal for.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMC452QS16G-AnalogDevices.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz LINEAR & POWER AMPLIFIERS - SMT 11 11 - 134 Typical Applications Features The HMC452QS16G / HMC452QS16GE is ideal for applications requiring a high dynamic range amplifier: • GSM, GPRS & EDGE • CDMA & W-CDMA • CATV/Cable Modem • Fixed Wireless & WLL Output IP3: +48 dBm 22.5 dB Gain @ 400 MHz 9 dB Gain @ 2100 MHz 53% PAE @ +31 dBm Pout +24 dBm CDMA2000 Channel Power@ -45 dBc ACP Single +5V Supply Integrated Power Control (VPD) QSOP16G SMT Package: 29.4 mm2 Functional Diagram General Description The HMC452QS16G & HMC452QS16GE are high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifiers operating between 0.4 and 2.2 GHz.
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