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HMC455LP3E - InGaP HBT

Download the HMC455LP3E datasheet PDF (HMC455LP3 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for ingap hbt.

Description

The HMC455LP3 & HMC455LP3E are high output IP3 GaAs InGaP Heterojunction Bipolar Transistor (HBT) ½ watt MMIC amplifiers operating between 1.7 and 2.5 GHz.

Features

  • Output IP3: +42 dBm Gain: 13 dB 56% PAE @ +28 dBm Pout +19 dBm W-CDMA Channel Power @ -45 dBc ACP 3x3 mm QFN SMT Package General.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMC455LP3_HittiteMicrowaveCorporation.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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v02.0605 HMC455LP3 / 455LP3E InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz 11 Typical Applications This amplifier is ideal for high linearity applications: • Multi-Carrier Systems • GSM, GPRS & EDGE • CDMA & WCDMA • PHS Functional Diagram Features Output IP3: +42 dBm Gain: 13 dB 56% PAE @ +28 dBm Pout +19 dBm W-CDMA Channel Power @ -45 dBc ACP 3x3 mm QFN SMT Package General Description The HMC455LP3 & HMC455LP3E are high output IP3 GaAs InGaP Heterojunction Bipolar Transistor (HBT) ½ watt MMIC amplifiers operating between 1.7 and 2.5 GHz. Utilizing a minimum number of external components the amplifier provides 13 dB of gain and +28 dBm of saturated power at 56% PAE from a single +5 Vdc supply voltage. The high output IP3 of +42 dBm coupled with the low VSWR of 1.
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