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HMC453QS16GE - InGaP HBT

Download the HMC453QS16GE datasheet PDF. This datasheet also covers the HMC453QS16G variant, as both devices belong to the same ingap hbt family and are provided as variant models within a single manufacturer datasheet.

Description

The HMC453QS16G & HMC453QS16GE are high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1.6 watt MMIC power amplifiers operating between 0.4 and 2.2 GHz.

Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 21.5 dB at 0.4 GHz and 8 dB at 2.1 GHz.

Features

  • Output IP3: +51 dBm 21.5 dB Gain @ 400 MHz 8 dB Gain @ 2100 MHz 45% PAE @ +32 dBm Pout +25 dBm CDMA2000 Channel Power@ -45 dBc ACP Single +5V Supply Integrated Power Control (VPD) QSOP16G SMT Package: 29.4 mm2 General.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMC453QS16G-AnalogDevices.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Analog Devices

Part Number Description
HMC453QS16G InGaP HBT
HMC453ST89 InGaP HBT
HMC453ST89E InGaP HBT
HMC450QS16G GaAs InGaP HBT MMIC
HMC450QS16GE GaAs InGaP HBT MMIC

Full PDF Text Transcription

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HMC453QS16G / 453QS16GE v01.0205 InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz LINEAR & POWER AMPLIFIERS - SMT 11 11 - 178 Typical Applications The HMC453QS16G / HMC453QS16GE is ideal for applications requiring a high dynamic range amplifier: • GSM, GPRS & EDGE • CDMA & W-CDMA • CATV/Cable Modem • Fixed Wireless & WLL Functional Diagram Features Output IP3: +51 dBm 21.5 dB Gain @ 400 MHz 8 dB Gain @ 2100 MHz 45% PAE @ +32 dBm Pout +25 dBm CDMA2000 Channel Power@ -45 dBc ACP Single +5V Supply Integrated Power Control (VPD) QSOP16G SMT Package: 29.4 mm2 General Description The HMC453QS16G & HMC453QS16GE are high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1.6 watt MMIC power amplifiers operating between 0.4 and 2.2 GHz.
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