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HMC453QS16G - InGaP HBT

Description

The HMC453QS16G & HMC453QS16GE are high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1.6 watt MMIC power amplifiers operating between 0.4 and 2.2 GHz.

Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 21.5 dB at 0.4 GHz and 8 dB at 2.1 GHz.

Features

  • Output IP3: +51 dBm 21.5 dB Gain @ 400 MHz 8 dB Gain @ 2100 MHz 45% PAE @ +32 dBm Pout +25 dBm CDMA2000 Channel Power@ -45 dBc ACP Single +5V Supply Integrated Power Control (VPD) QSOP16G SMT Package: 29.4 mm2 General.

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Other Datasheets by Analog Devices

Part Number Description
HMC453QS16GE InGaP HBT
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Full PDF Text Transcription

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HMC453QS16G / 453QS16GE v01.0205 InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz LINEAR & POWER AMPLIFIERS - SMT 11 11 - 178 Typical Applications The HMC453QS16G / HMC453QS16GE is ideal for applications requiring a high dynamic range amplifier: • GSM, GPRS & EDGE • CDMA & W-CDMA • CATV/Cable Modem • Fixed Wireless & WLL Functional Diagram Features Output IP3: +51 dBm 21.5 dB Gain @ 400 MHz 8 dB Gain @ 2100 MHz 45% PAE @ +32 dBm Pout +25 dBm CDMA2000 Channel Power@ -45 dBc ACP Single +5V Supply Integrated Power Control (VPD) QSOP16G SMT Package: 29.4 mm2 General Description The HMC453QS16G & HMC453QS16GE are high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1.6 watt MMIC power amplifiers operating between 0.4 and 2.2 GHz.
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