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HMC409LP4E - GaAs InGaP HBT 1WATT POWER AMPLIFIER

General Description

The HMC409LP4E are high efficiency GaAs InGaP HBT MMIC Power amplifiers operating from 3.3 to 3.8 GHz.

The amplifier is packaged in a low cost, leadless SMT package.

Key Features

  • Gain: 31 dB 40% PAE @ +32.5 dBm pout 2% EVM @ Pout = +22 dBm with 54Mbps OFDM Signal +46 dBm Output IP3 Integrated Power Control (Vpd) Single +5V Supply General.

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📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Hittite Microwave Corporation Logo HMC409LP4 GaAs InGaP HBT Hittite Microwave Corporation

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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v04.1217 HMC409LP4E GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz Amplifiers - Linear & Power - SMT Typical Applications This amplifier is ideal for use as a power amplifier for 3.3 - 3.8 GHz applications: • WiMAX 802.16 • Fixed Wireless Access • Wireless Local Loop Functional Diagram Features Gain: 31 dB 40% PAE @ +32.5 dBm pout 2% EVM @ Pout = +22 dBm with 54Mbps OFDM Signal +46 dBm Output IP3 Integrated Power Control (Vpd) Single +5V Supply General Description The HMC409LP4E are high efficiency GaAs InGaP HBT MMIC Power amplifiers operating from 3.3 to 3.8 GHz. The amplifier is packaged in a low cost, leadless SMT package. Utilizing a minimum of external components the amplifier provides 31 dB of gain and +32.5 dBm of saturated power from a +5V supply voltage.