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HMC406MS8G - GaAs InGaP HBT MMIC POWER AMPLIFIER

Description

The HMC406MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 5 and 6 GHz.

The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance.

Features

  • Gain: 17 dB Saturated Power: +29 dBm 38% PAE Supply Voltage: +5V Power Down Capability Low External Part Count Functional Diagram General.

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Full PDF Text Transcription

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Amplifiers - Linear & Power - SMT HMC406MS8G / 406MS8GE v06.0611 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 6 GHz Typical Applications The HMC406MS8G(E) is ideal for: • WiMAX & WiLAN • DSRC • Military & Maritime • Private Mobile Radio • UNII & ISM Features Gain: 17 dB Saturated Power: +29 dBm 38% PAE Supply Voltage: +5V Power Down Capability Low External Part Count Functional Diagram General Description The HMC406MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 5 and 6 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance.
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