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HMC406MS8GE - GaAs InGaP HBT MMIC POWER AMPLIFIER

Download the HMC406MS8GE datasheet PDF (HMC406MS8G included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for gaas ingap hbt mmic power amplifier.

Description

The HMC406MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 5 and 6 GHz.

The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance.

Features

  • Gain: 17 dB Saturated Power: +29 dBm 38% PAE Supply Voltage: +5V Power Down Capability Low External Part Count Functional Diagram General.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMC406MS8G_HittiteMicrowaveCorporation.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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Amplifiers - Linear & Power - SMT HMC406MS8G / 406MS8GE v06.0611 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 6 GHz Typical Applications The HMC406MS8G(E) is ideal for: • WiMAX & WiLAN • DSRC • Military & Maritime • Private Mobile Radio • UNII & ISM Features Gain: 17 dB Saturated Power: +29 dBm 38% PAE Supply Voltage: +5V Power Down Capability Low External Part Count Functional Diagram General Description The HMC406MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 5 and 6 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance.
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