Datasheet4U Logo Datasheet4U.com

HMC407MS8GE - GaAs InGaP HBT MMIC POWER AMPLIFIER

Download the HMC407MS8GE datasheet PDF (HMC407MS8G included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for gaas ingap hbt mmic power amplifier.

Description

The HMC407MS8G & HMC407MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 5 and 7 GHz.

The amplifier requires no external matching to achieve operation and is thus truly 50 Ohm matched at input and output.

Features

  • Gain: 15 dB Saturated Power: +29 dBm 28% PAE Supply Voltage: +5V Power Down Capability No External Matching Required Functional Diagram General.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMC407MS8G_HittiteMicrowaveCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

  • HMC403S8G - HBT DIGITAL PHASE-FREQUENCY DETECTOR (Hittite Microwave Corporation)
  • HMC409LP4 - GaAs InGaP HBT (Hittite Microwave Corporation)
  • HMC410MS8G - GaAs MMIC (Hittite Microwave Corporation)
  • HMC411MS8G - GaAs MMIC (Hittite Microwave Corporation)
  • HMC425 - 0.5 dB LSB GaAs MMIC (Hittite Microwave Corporation)
  • HMC435MS8G - SPDT NON-REFLECTIVE SWITCH (Hittite Microwave Corporation)
  • HMC436MS8G - GaAs MMIC DPDT DIVERSITY SWITCH (Hittite Microwave Corporation)
  • HMC448 - GaAs MMIC (Hittite Microwave Corporation)
  • HMC449 - GaAs MMIC (Hittite Microwave Corporation)
  • HMC449LC3B - SMT GaAs MMIC (Hittite Microwave)
Other Datasheets by Analog Devices

Full PDF Text Transcription

Click to expand full text
HMC407MS8G / 407MS8GE v04.1019 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 7 GHz Typical Applications This amplifier is ideal for use as a power amplifier for 5 - 7 GHz applications: • UNII • HiperLAN 9 Features Gain: 15 dB Saturated Power: +29 dBm 28% PAE Supply Voltage: +5V Power Down Capability No External Matching Required Functional Diagram General Description The HMC407MS8G & HMC407MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 5 and 7 GHz. The amplifier requires no external matching to achieve operation and is thus truly 50 Ohm matched at input and output. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance.
Published: |